| PART |
Description |
Maker |
| IRFI9640 IRFI9640G |
Power MOSFET(Vdss=-200V Rds(on)=0.50ohm Id=-6.1A)
Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-6.1A)
Power MOSFET(Vdss=-200V/ Rds(on)=0.50ohm/ Id=-6.1A)
-200V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
IRF[International Rectifier]
|
| IRFI640G |
200V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=200V/ Rds(on)=0.18ohm/ Id=9.8A)
Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=9.8A) 功率MOSFET（减振钢板基本\u003d 200V的电压，的Rds（on）\u003d 0.18ohm，身份证\u003d 9.8A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRF9610 |
-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.8A)
Power MOSFET(Vdss=-200V/ Rds(on)=3.0ohm/ Id=-1.8A)
|
IRF[International Rectifier]
|
| IRF9630 IRF9630PBF |
-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A)
CAP 4.7PF 50V /-0.25PF C0G SMD-0402 TR-7-PA SN100 HIGH-FREQ
|
IRF[International Rectifier]
|
| IRFU220N IRFR220N IRFR220NTR IRFR220NTRL IRFR220NT |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 5A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 200伏五（巴西）直| 5A条（丁）|52AA
Power MOSFET(Vdss=200V, Rds(on)max=600mohm, Id=5.0A)
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| MRF6S9060NR1 MRF6S9060MR1 MRF6S9060NBR1 MRF6S9060M |
RF Power Field Effect Transistors
CAP 10PF 200V 200V X7R RAD.20 .20X.20 BULK P-MIL-PRF-39014
CAP CER .10UF 100V 20% AXIAL
|
Freescale (Motorola)
飞思卡尔半导体(中国)有限公司
|
| IRHNA57260 IRHNA54260 IRHNA58260 IRHNA57060 IRHNA5 |
200V N-CHANNEL
RADIATION HARDENED POWER MOSFET
200V, N-CHANNEL
|
IRF[International Rectifier]
|
| FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1 FS |
3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 3A 200V的电压，1.50欧姆，拉德硬，SEGR性，P通道功率MOSFET
3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 3 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
From old datasheet system
3A/ -200V/ 1.50 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| IRF9240 IRF9240-15 |
Simple Drive Requirements
TRANSISTORS P-CHANNEL(Vdss=-200V, Rds(on)=0.5ohm, Id=-11A)
HEXFET?TRANSISTORS 200V, P-CHANNEL
11 A, 200 V, 0.58 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
|
IRF[International Rectifier]
|
| FQI32N20C FQB32N20C FQB32N20CTM |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET 28 A, 200 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| RF1S640SM IRF640 RF1S640 |
N-Channel Power MOSFETs/ 18A/ 150-200V
18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
